Yazar "Ünlü, Hilmi" için listeleme
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Atomistic Origins of Compound Semiconductor Synthesis with Computational Neuromorphic Engineering
Turfanda, Aykut; Gürel, Hakan Hikmet; Ünlü, Hilmi (IOP Science, 2024)We propose the usage of multi-element bulk materials to mimic neural dynamics instead of atomically thin materials via the modeling of group II–IV compound semiconductor growth using vacancy defects and dopants by creating ... -
Computational Analysis of Device-to-Device Variability in Resistive Switching Through Single-Layer Hexagonal Boron Nitride and Graphene Vertical Heterostructure Model
Turfanda, Aykut; Ünlü, Hilmi (IOP, 2024)We quantify the device-to-device variations in resistive switching by considering a single-layer hexagonal boron nitride and graphene junction as a model. Then, we mimic the variations in the surface of a two-dimensional ... -
Cycle-to-Cycle Switching Endurance Variability in Vertically Aligned Nanocrystalline Molybdenum Disulfide: Computational Insights
Turfanda, Aykut; Ünlü, Hilmi (IOP, 2024)We propose a model to depict abrupt transient changes in the endurance test results of a resistive switching device comprising vertically oriented layers of nanocrystalline transition metal dichalcogenide layers with ... -
Mimicking Bacterial Learning and Memory in Tungsten Based Two-Sided Single Layers of WSeO, WSeS, WSeSe, and WSeTe
Turfanda, Aykut; Ünlü, Hilmi (AIP Publishing, 2023)We mimic bacterial learning and memory abilities in tungsten based two-sided single layers of WSeO, WSeS, WSeSe, and WSeTe, where the thickness of the material represents the growth in time. We aim to create a quantum ... -
Modelling of Strain Effects in Core/shell QDs with Tight Binding Theory and k.p Effective Mass Approximation
Malkoç, Derya; Danacı, Burçin; Ünlü, Hilmi (IOP Publishing Ltd, 2024)Reliable predictions of the potential of nanoscale semiconductor heterostructures for nanodevice fabrication require accurate theoretical models and precise numerical calculations to assess how strain affects their ... -
Single-Electron-Precise Tailoring of a Resistive-Switching Device by Tuning Transfer Printing Parameters: A Computational Study
Turfanda, Aykut; Ünlü, Hilmi (IEEE, 2023)We simulated and modeled a molecular junction to propose a conductive filament (CF) free resistive-switching based memory device. In transfer printing (TP)-based molecular electronic junctions, there might be metal ... -
Structural and Optical Properties of ZnSe and ZnSe/ZnS Quantum Dots Prepared by Using Green Method
Belaribi, Imene; Balaban, Mesut; Bendella, Soumia; Ünlü, Hilmi (Springer, 2025)We report the green synthesis, structural characterization, optical measurements, and theoretical modeling of ZnSe and ZnSe/ZnS quantum dots (QDs) synthesized via a rapid aqueous method using thioglycolic acid (TGA) as a ... -
The Temperature-Dependent Tight Binding Theory Modelling of Strain and Composition Effects on the Electronic Structure of CdSe- and ZnSe-Based Core/Shell Quantum Dots
Malkoç, Derya; Ünlü, Hilmi (Multidisciplinary Digital Publishing Institute (MDPI), 2025)We propose a temperature-dependent optimization procedure for the secondnearest neighbor (2NN) sp3s* tight-binding (TB) theory parameters to calculate the effects of strain, structure dimensions, and alloy composition ...
