Browsing by Author "Ünlü, Hilmi"
Now showing items 1-6 of 6
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Atomistic Origins of Compound Semiconductor Synthesis with Computational Neuromorphic Engineering
Turfanda, Aykut; Gürel, Hakan Hikmet; Ünlü, Hilmi (IOP Science, 2024)We propose the usage of multi-element bulk materials to mimic neural dynamics instead of atomically thin materials via the modeling of group II–IV compound semiconductor growth using vacancy defects and dopants by creating ... -
Computational Analysis of Device-to-Device Variability in Resistive Switching Through Single-Layer Hexagonal Boron Nitride and Graphene Vertical Heterostructure Model
Turfanda, Aykut; Ünlü, Hilmi (IOP, 2024)We quantify the device-to-device variations in resistive switching by considering a single-layer hexagonal boron nitride and graphene junction as a model. Then, we mimic the variations in the surface of a two-dimensional ... -
Cycle-to-Cycle Switching Endurance Variability in Vertically Aligned Nanocrystalline Molybdenum Disulfide: Computational Insights
Turfanda, Aykut; Ünlü, Hilmi (IOP, 2024)We propose a model to depict abrupt transient changes in the endurance test results of a resistive switching device comprising vertically oriented layers of nanocrystalline transition metal dichalcogenide layers with ... -
Mimicking Bacterial Learning and Memory in Tungsten Based Two-Sided Single Layers of WSeO, WSeS, WSeSe, and WSeTe
Turfanda, Aykut; Ünlü, Hilmi (AIP Publishing, 2023)We mimic bacterial learning and memory abilities in tungsten based two-sided single layers of WSeO, WSeS, WSeSe, and WSeTe, where the thickness of the material represents the growth in time. We aim to create a quantum ... -
Single-Electron-Precise Tailoring of a Resistive-Switching Device by Tuning Transfer Printing Parameters: A Computational Study
Turfanda, Aykut; Ünlü, Hilmi (IEEE, 2023)We simulated and modeled a molecular junction to propose a conductive filament (CF) free resistive-switching based memory device. In transfer printing (TP)-based molecular electronic junctions, there might be metal ... -
The Temperature-Dependent Tight Binding Theory Modelling of Strain and Composition Effects on the Electronic Structure of CdSe- and ZnSe-Based Core/Shell Quantum Dots
Malkoç, Derya; Ünlü, Hilmi (Multidisciplinary Digital Publishing Institute (MDPI), 2025)We propose a temperature-dependent optimization procedure for the secondnearest neighbor (2NN) sp3s* tight-binding (TB) theory parameters to calculate the effects of strain, structure dimensions, and alloy composition ...
