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Fujitsu Fram – Non-Volatile Memory of The Future

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info:eu-repo/semantics/openAccess

Date

2014-05

Author

Mc Kearney, Brendan

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Citation

MC KEARNEY, Brendan. "Fujitsu Fram – Non-Volatile Memory of The Future." 2. Uluslararası İstanbul Akıllı Şebekeler Kongre ve Fuarı, (2014): 122-124.

Abstract

Electrical meters and smart meters provide many new challenges to the memory technologies. On one hand the meters need to store usage data much more frequently than ever, ideally even in real time; on the other hand the metering systems need to operate reliably and ensure data integrity even in unstable power supply conditions. The increasing cost pressure also requires the meters to save energy and omit batteries, in order to keep operating cost and maintenance cost as low as possible. Fujitsu FRAM technology provides the right answer to these challenges. The non-volatile Random Access Memory combines the advantages of SRAM/DRAM and conventional non-volatile memories. This paper shows how FRAM, with its outstanding features (fast writing, high endurance, low power consumption and non-volatility), enables reliable, simplified and efficient metering systems with long life time.

URI

https://hdl.handle.net/11352/1908

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  • Bilgisayar Mühendisliği Bölümü [214]



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