Basit öğe kaydını göster

dc.contributor.authorMc Kearney, Brendan
dc.date.accessioned2014-05-27T07:10:29Z
dc.date.available2014-05-27T07:10:29Z
dc.date.issued2014-05
dc.identifier.citationMC KEARNEY, Brendan. "Fujitsu Fram – Non-Volatile Memory of The Future." 2. Uluslararası İstanbul Akıllı Şebekeler Kongre ve Fuarı, (2014): 122-124.en_US
dc.identifier.urihttps://hdl.handle.net/11352/1908
dc.description.abstractElectrical meters and smart meters provide many new challenges to the memory technologies. On one hand the meters need to store usage data much more frequently than ever, ideally even in real time; on the other hand the metering systems need to operate reliably and ensure data integrity even in unstable power supply conditions. The increasing cost pressure also requires the meters to save energy and omit batteries, in order to keep operating cost and maintenance cost as low as possible. Fujitsu FRAM technology provides the right answer to these challenges. The non-volatile Random Access Memory combines the advantages of SRAM/DRAM and conventional non-volatile memories. This paper shows how FRAM, with its outstanding features (fast writing, high endurance, low power consumption and non-volatility), enables reliable, simplified and efficient metering systems with long life time.en_US
dc.language.isoengen_US
dc.publisherT.C. Bilim, Sanayi ve Teknoloji Bakanlığıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleFujitsu Fram – Non-Volatile Memory of The Futureen_US
dc.typearticleen_US
dc.contributor.departmentFSM Vakıf Üniversitesi, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.relation.publicationcategory[0-Belirlenecek]en_US
dc.contributor.institutionauthorMc Kearney, Brendan


Bu öğenin dosyaları:

Thumbnail

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster